ONCS Component Naming Conventions

From: ONCS Group

Date: April 13, 1998

Devices or components which are addressable by ONCS online software are identified by an ASCII name of up to 32 characters. The name consists of the following conventions for assembling a name from the type of device that is being addressed and the part of the PHENIX detector where the device lives.

Device names are composed of fields that are separated by an ASCII period ".".

Device name fields identify the device type, sub-system, arm, side, one or more sub system specific segments, followed by a unit number where appropriate

A device type identifies an addressable component of the PHENIX detector.

Identifiable fields are included in a device name as they are appropriate to that device. So not every device has, for instance a side field.

Device names are not case sensitive.

The following tables identified the abbreviations that are used to identify a device of the PHENIX detector.

The following ASCII identifiers identify sub systems.

 

Sub System Mnemonic
BB Beam Beam
MVDB MVD barrel
MVDE MVD endcaps
DC Drift Chamber
PC1 Pad Chamber
PC2 Pad Chamber 2
PC3 Pad Chamber 3
TEC Time Expansion Chamber
RICH  
TOF Time of Flight
PGSC Lead scintillator
PBGL Lead Glass
MUTR Muon Tracker
MUID Muon Id
MM * Main Magnet

 

 

 

Arms

Arm Identifier Arm Name
E East
W West

 

Side

Side Identifier Side Name
N North
S South

 

 

Segments:

Segment Identifier Segment Name
SM Supermodule
SR Supermodule row
SC Supermodule column
KS Keystone
PL Plane
PA Panel
SE Sector
HS Half Sector
RO Row
CO Column
MO Module
EN End
SL Slat
ST Strip
TO Tower
CE Cell
GP Gap
SN Station
TB Tube
TV Tube Vertical
TH Tube Horizontal
WE Wedge
   

 

 

Configurable Devices

Component Name Component Type
DCB Data Collection Board
DCM Data Collection Module
FEM Front End Module
HV High Voltage
MTM Master Timing Module
GTM Granule Timing Module
PPG Programmable Pulse Generator
   
Others as identified  
   
   
   

 

 

Examples of the use of the naming convention follow for the High Voltage and the DCM components as they would be addressed with this convention:

 

 

MVD

 

Dcm

Dcm’s of the mvd reside in wedges. Each wedge are numbered from 0 – 11 , starting at phi = 0. An MVD DCM would be named:

 

DCM.MVD.[E,W].[N,S].EN.WEDGE[0-11]

 

High Voltage

HV.MVDB.H[E,W].EN[N,S].SH[0-1].RO[0-5]

HV.MVDE.EN[N,S].HA[E,W].WE[0-11]

 

DRIFT CHAMBER

 

Dcm

Each keystone is associated with an arm and a side. There are 20 keystones per side. There is 1 FEM card per keystone.

On day 1 there will be 1 DCM per keystone (1 DCM per FEM on 1 keystone).

On day N, there will be 2 DCMs per keystone.

The names of the drift chamber DCMs will be

DCM[0-1].DC. [E,W].[N,S].KS[0-19].

 

High Voltage

HV.DC.[E,W].[N,S].KS[0-3].[0-3]

 

PbSc

 

DCM

PbSc consists of 6 sectors.

Each dcm is mapped to one Fem. Each FEM is mapped to one supermodule. There are 18 supermodules per sector. Sectors are located on either arm. So a DCM can be found by the follow name:

DCM.PBSC.A[E].SE[0-6].SM[0-17]

 

High Voltage

HV.PBSC.[E,W].SE[0-3].SR[0-2].SC[0-5].[0-2]

PbGl

 

PbGl consists of 2 sectors.

Each dcm is mapped to one Fem. Each FEM is mapped to one supermodule. There are 32 supermodules per sector. Sectors are located on either arm. So a DCM can be found by the follow name:

DCM.PBGL.A[E].SE[0-2].SM[0-31]

High Voltage

HV.PBGL.[E,W].SE[0-1].SR[0-3].SC[0-7].RO[0-11].CO[0-11]

TEC

 

DCM

For each arm TEC consists of 4 sectors. Each sector consists of 6 planes numbered 1 to 6.

Planes 1 to 5 each have 7 FEM modules..

FEM to DCM Mapping

One day 1 there are 4 FEM’s per DCM.

On day N, there is 1 FEM per DCM.

A DCM can be found with the following name:

DCM[0-1].TEC.[E,W].[N,S].SE[0-3].PL[0-5]

 

High Voltage

HV.TEC.[E,W].[N,S].SE[0-3].PL[0-5].[0-3]

 

PC

 

DCM

The PC has 3 planes for each arm. Planes are divided into half sectors. Each half sector has a single FEM.

FEM to DCM Mapping

On day 1 there are 2 FEM’s per DCM. Day 1 has 2(fem) X 8 (half sectors) X 3 planes X 2 (arms) = 96 FEMs (48 DCMs).

On day N there is 1 FEM per DCM

A DCM can be found with the following name:

DCM[0-1].PC.[E,W].[N,S].SE[0-3].PL[0-3].HS[0-7]

 

High Voltage

PC 2,3

HV.PC.[E,W].[N,S].SE[0-3].[0-3]

PC 1

HV.PC.[E,W].[N,S].SE[0-7].[0-3]

 

TOF

TOF has detector elements identified by the arm, side, sector, panel, strip , slat and end.

Each segment has the following range:

ARM[0].SIDE[0-1].SECTOR[0-1].PANEL[0-3].STRIP[0-31].SLAT[0-2].END[0-1].

There are 10 panels total. Two in sector 0 and 8 in sector 1. The sectors are split between the north and south side. So there are 4 panels in each side of each sector.

Each TOF panel consists of 96 slats (scintillators) and each slat has two PMT’s , one on each ends.

FEM to DCM Mapping

On day 1 there are 16 FEM per DCM. One 64 FEMs per DCB.

The mapping of FEMs to PMTs needs to be verified by H. Sako.

So a DCM has the following identification:

 

DCM.TOF. [N,S].[E,W].SE[0-1].PA[0-3].ST[0-31].SL[0-2].EN[0-1]

High Voltage

HV.TOF.[E,W].[N,S].SE[0-1].PA[0-3].ST[0-31].SL[0-2].[0-1]

RICH

 

DCM

Rich identifies detector elements by arm, side supermodule row and pmt.

Each segment has the following range of elements:

A DCM would be identified by the following name:

DCM[x].RICH.[N,S],[E,W],SU[0-39].RO[0-1]

High Voltage

HV.RICH.[E,W].[N,S].SM[0-39].RO[0-1].[0-15]

 

MUID

 

DCM

MuId maps a FEM to a single DCM. There is one FEM for each of the horizontal and vertical tubes for each arm.

A DCM would be identified by the following name:

DCM.MUID.[N,S].T[H,V]

 

High Voltage

HV.MUID.[N,S].GP[0-4].PA[0-7].[0-7].T[H,V]

MUTR

Source: PHENIX Integration Document

Date: April 7, 1998

A MUID detector element is mapped to a detector arm, a station and an octant.

MUTR FEM to DCM mapping needs to be verified.

 

DCM.MUTR.[N,S].SN[0-2].OC[0-7]

 

High Voltage

HV.MUTR.[N,S].SN[0-3].OC[0-8].PL[0-3].[0-3]